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一种双氧化层RRAM

Translated title of the contribution: Double-oxide-layer RRAM
  • Zongjie Shen (Inventor)
  • , Chun Zhao (Inventor)
  • , Cezhou Zhao (Inventor)
  • , Li Yang (Inventor)
  • , Tian Luo (Inventor)
  • , Yi Zhang (Inventor)
  • , Yi Sun (Inventor)
  • NA

Research output: Patent

Translated title of the contributionDouble-oxide-layer RRAM
Original languageChinese (Simplified)
Patent granted numberCN209747558U
Validity date12/04/29
Publication statusPublished - 6 Dec 2019

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