一种双氧化层RRAM及其制备方法

Translated title of the contribution: Double-oxide-layer RRAM and preparation method thereof

Zongjie Shen (Inventor), Chun Zhao (Inventor), Cezhou Zhao (Inventor), Li Yang (Inventor), Tian Luo (Inventor), Yi Zhang (Inventor), Yi Sun (Inventor)

Research output: Patent

Translated title of the contributionDouble-oxide-layer RRAM and preparation method thereof
Original languageChinese (Simplified)
Patent granted numberCN110071216B
Validity date12/04/39
Publication statusPublished - 27 Dec 2024

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