一种双氧化层RRAM及其制备方法

Translated title of the contribution: Double-oxide-layer RRAM and preparation method thereof
  • Zongjie Shen (Inventor)
  • , Chun Zhao (Inventor)
  • , Cezhou Zhao (Inventor)
  • , Li Yang (Inventor)
  • , Tian Luo (Inventor)
  • , Yi Zhang (Inventor)
  • , Yi Sun (Inventor)

Research output: Patent

Translated title of the contributionDouble-oxide-layer RRAM and preparation method thereof
Original languageChinese (Simplified)
Patent granted numberCN110071216B
Validity date12/04/39
Publication statusPublished - 27 Dec 2024

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