Material Science
Devices
96%
Nanosheet
46%
Temperature
42%
Material
41%
Graphene
38%
Ferroelectric Material
38%
Resistive Random-Access Memory
27%
Metal Oxide
26%
Electrode
24%
Oxide Compound
23%
Dielectric Material
22%
Oxide
21%
Photoconductivity
19%
Dielectric Material
19%
Nanoparticle
19%
Graphene Oxide
19%
Aluminum Oxide
19%
Buffer Layer
19%
Iron Ion
19%
Nanosphere
19%
Durability
18%
Plasticity
15%
Electrical Conductivity
11%
Metal
11%
Chemical Vapor Deposition
9%
Physical Property
9%
Wide Bandgap Semiconductor
9%
Cell Growth
8%
Thin Films
7%
Dielectric Films
6%
Biocompatibility
5%
Engineering
Resistive
100%
Resistive Random Access Memory
50%
Performance
43%
Random Access Memory Device
42%
Applications
31%
Lower Temperature
28%
Mechanisms
24%
Dielectrics
23%
Nonvolatile Memory
22%
Annealing Temperature
22%
Electric Potential
22%
Cycles
19%
Indium-Tin-Oxide
19%
Retention Time
19%
Bionics
19%
Dielectric Layer
19%
Resistance Ratio
15%
Electric Power Utilization
14%
Switching
12%
Characteristics
9%
Indium Tin Oxide
9%
Demonstrates
9%
Supporting Evidence
9%
Electrical Performance
9%
Device Performance
9%
Deposited Film
9%
Film Material
8%
Thin Films
8%
Resistance-Voltage
7%
Dielectric Film
6%
Two-Dimensional Materials
5%
Term Memory
5%
Speed Operation
5%
Low Power Consumption
5%
Artificial Intelligence
5%
Chemistry
Application
25%
Device
21%
Resistance
19%
Resistive Random-Access Memory
19%
Reaction Mechanism
19%
Aqueous Solution
19%
Dielectric Material
19%
Indium Tin Oxide
12%
Plastic Property
8%
Procedure
6%
Reaction Temperature
6%
Retention Time
6%
Voltage
6%
Industry
6%
