WEN LIU, professor, School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, China. Dr. Liu received the B.S. degree from Peking University, Beijing, China, in 2004, and the Ph.D. degree from the Nanyang Technological University, Singapore, in 2008. Currently Dr. Liu is Chair of IEEE CASS-EDS Joint Chapter Suzhou, deputy Director of the Youth Innovation Promotion Committee of the Third Generation Semiconductor Industry Technology Innovation Strategy Alliance (CASA) China, and also Executive Director XJTLU Advanced Semiconductor Research Center, Fellow of The Higher Education Academy of the UK, IEEE Senior Member. To date, Dr. Liu has supervised 9 Ph.Ds. and 20+ Master students to completion. Her current research interests include GaN power devices and their circuit integration. Dr. Liu has published 60+ journal papers, 60+ conference papers, and applied 20+ patents with 16 of them authorized. In the last 5 years, she has been granted various level of funds of more than 8 million RMB including the NSFC General Programme (2023-2027), the National Key R&D Programme from the ministry of Science and Technology (2022-2025), Technical commission project from Huawei Technologies Co. Ltd (2022-2023), etc.

刘雯博士，西交利物浦大学人工智能与先进技术学院教授，西交利物浦大学先进半导体研究中心执行主任，博士生导师，英国高等教育协会会士，国际电气电子工程协会（IEEE）电路与系统、电子器件学会苏州分会主席，国家第三代半导体产业技术创新战略联盟(CASA)青年创新促进委员会副主任委员，西浦智能工程学院-红与蓝微电子氮化镓功率器件联合研究中心主任。长期从事宽禁带半导体氮化镓电力电子器件及其单片功率集成芯片技术研究。迄今发表IEEE EDL、TED、TPE等同行评议论文130余篇，在功率半导体领域国际顶级会议ISPSD发表通讯作者论文7篇。担任IEEE国际集成电路设计与工艺会议出版主席（2023）和会务主席（2021），第五届全国宽禁带半导体学术会议组织委员会委员（2023，2025），功率半导体器件与集成电路研讨会程序委员会委员（2024，2025）。已培养毕业博士生9名，硕士生20余名，申请国家发明专利20余件，授权13件，编制行业标准4项。主持十余项各级研发项目，包括国家科技重大专项、国家重点研发计划、国家自然科学基金面上项目、华为公司横向课题等，2018年以来作为项目负责人已获经费逾千万元。

Our group is looking for candidates for postdoc fellows, M.S./Ph.D students, research assistants. Those who are interested in these positions are welcomed to enquire through email.

      本课题组招收博士后研究员、硕士/博士研究生、科研助理。欢迎感兴趣的同学通过电子邮件交流。

 作为第一导师指导博士毕业生9名：

v  “Fully Monolithic Integration of GaN-based Micro-LED and 2T1C Drive Circuit”, 2025，王超，上海新微技术研发中心有限公司

v  “Passivation and Deposition of High-k Materials on GaN Power Electronic Devices”, 2025，王朝义，长飞先进半导体（武汉）有限公司

v  “GaN n-FET and p-FET for CMOS Integration on GaN-on-Si Platform”, 2024，王惟生，张江实验室 (上海)

v  “Research on GaN p-Channel Field-Effect Transistor for GaN Complementary Technology”, 2024，孙志伟，苏州实验室

v  “GaN n-/p-FETs for Power Integration: Device Design and Fabrication”, 2024，张元雷，ASML (北京)

v  “Threshold Voltage Shifts and Dynamic On-resistance Degradation of Wide Bandgap Semiconductor Devices under Electrical Stress” ，2024，梁烨，深圳光峰科技股份有限公司

v  “Hydrogen Plasma Treated P-GaN Gate HEMTS: Device to Integration”, 2024，李帆，NXP (北京)

v  “GaN-based Monolithic Integrated Power Converter Circuit Design and Associated Application”, 2023，朱昱豪，青海大学能源与电气工程学院的储能科学与技术系

v  “Monolithically Integrated GaN MIS- HEMT Blocks for Power Conversion System”, 2022，李昂，中国科学院苏州纳米所博士后（2023-2025），西交利物浦大学助理研究员

Wide bandgap semiconductor devices and their integrated circuit

• Physics-driven and AI-enhanced methods for design of GaN-based devices and IC;
• High performance GaN power devices and IC;
• All GaN DC-DC converter for radiation resistance
• GaN Optoelectronic Integration;

2025-now, Professor, Department of EEE- School of Advanced Technology, Xi’an Jiaotong-Liverpool University

2021-2025，Associate Professor/Senior Associate Professor, Department of EEE- School of Advanced Technology, Xi’an Jiaotong-Liverpool University

2014-2021, Assistant Professor, Department of EEE- School of Advanced Technology, Xi’an Jiaotong-Liverpool University

SAT405/406 Final MRes Project

EEE417--Advanced Semiconductor Materials and Devices for Efficient Power Conversion

EEE406 Power Electronics and application of renewable energy

Outstanding Postgraduate Supervision Award 2023

Dushu Lake Science and Education Innovation Zone Visiting Engineering Award 2022