Projects per year
Personal profile
Personal profile
Dr. Jie Zhang is presently an assistant professor in the School of CHIPS, Taicang campus, Xian Jiaotong-liverpool University.Jie Zhang received her BSc degree from Jilin University in 2014. Then, she completed her PhD degree in 2019 from Peking University.In 2019-2023, Jie Zhang had a four-year postdoctoral experience in Hong Kong University of Science and Technology and Fudan University. Her main research interests include wide-bandgap semiconductor materials and devices.
Research interests
Wide-bandgap semiconductor materials
Semiconductor devices
Experience
Assistant Professor, Xian Jiaotong-Liverpool University - 2023 to present
Teaching
MES205TC, Digital Electronics II
Awards and honours
2021 Super postdoctor in Fudan University
2018 National scholarship in Peking University
Education/Academic qualification
Post-Doc., Academy for Engineering & Technology, Fudan University, -2023
Post-Doc., Department of Electronic & Computer Engineering , The Hong Kong University of Science and Technology, -2021
Ph.D., Peking University , - 2019
B.Sc., Jilin University,-2014
Person Types
- Staff
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Collaborations and top research areas from the last five years
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The role of oxygen impurity in GaN with O2 plasma treatment
Zhang, J. (PI)
1/01/26 → 31/12/28
Project: Internal Research Project
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Gallium nitride photoelectric integrated chips for information processing and transmitting
Zhang, J. (PI) & Zhang, P. (Team member)
1/01/25 → 31/12/27
Project: Governmental Research Project
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Development and Industrialization of High Performance Gallium Nitride Power Integrated Intelligent Chips
Gu, J. (Team member), Low, K. L. (Team member), Zhang, J. (Team member), Qi, Y. (Team member), Chen, H. (Team member), Li, J. (Team member), Hu, Y. (Team member) & Liu, W. (PI)
1/11/24 → 30/10/27
Project: Governmental Research Project
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Suzhou SIP Extended-Energy Big Data and Intelligent Computing High-Level Innovation (Research) Platform
Ma, J. (PI), Xue, F. (Team member), lim, E. (Team member), Xu, Z. (Team member), Xu, D. (Team member), Xiao, J. (Team member), Chen, M. (Team member), Yue, Y. (Team member), Man, K. L. (Team member), Yao, L. (Team member), Jin, X. (Team member), Liu, D. (Team member), Ji, C. (Team member), Pan, Y. (Team member), Zhu, X. (Team member), Xiang, N. (Team member), Zhang, H. (Team member), Chen, X. (Team member), Xu, X. (Team member), Han, B. (Team member), Qi, J. (Team member), Fang, L. (Team member), Zhang, J. (Team member), Zhao, Y. (Team member), Dong, Y. (Team member), Cai, J. (Team member), Lin, Y. (Team member), Cao, S. (Team member) & Wang, Y. (Team member)
1/10/24 → 30/09/26
Project: Governmental Research Project
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Exploring The Alignment of Realistic Applications of Project-Based Cases with Industry Needs and Expectations
Lu, Q. (PI), Vahed, A. (CoI), Zhang, J. (CoI), Chen, W. (CoI) & Hajjaj, S. S. H. (CoI)
1/03/24 → 31/12/25
Project: Internal Research Project
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Atomic layer etching-enabled interface engineering for enhanced carrier transport in GaN trench MOSFETs
Ling, M., Li, J., Hu, Z., Chen, Z., Zhang, P., Zhang, J., van Zalinge, H., Mitrovic, I. Z., Yang, X. & Liu, W., 28 Feb 2026, In: Applied Surface Science. 720, 165171.Research output: Contribution to journal › Article › peer-review
Open Access5 Citations (Scopus) -
Atomic-scale oxygen engineering as a switching strategy for 2DEG: Evolution from p-GaN to GaON enabling non-destructive HEMT fabrication
Liu, Y., Duan, J., Zhang, J., Ling, M., Wen, J., Chen, X., Huang, S., Low, K. L., Zhang, P., van Zalinge, H. & Liu, W., Jun 2026, In: Materials Today Advances. 30, 100807.Research output: Contribution to journal › Article › peer-review
Open Access -
Monolithic Integrated GaN Complementary Logic Circuits Using AlON/Al2O3 Bilayer Gate Dielectric
Zhang, X., Xu, Y., Duan, J., Qu, Z., Ji, H., Ding, C., Tian, H., Gu, J., Mitrovic, I., Zalinge, H. V., Huang, S., Zhang, J., Li, A. & Liu, W., Jun 2026, In: IEEE Transactions on Electron Devices. 73, 6, p. 3417-3421 5 p.Research output: Contribution to journal › Article › peer-review
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Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress
Liang, Y., Duan, J., Zhang, P., Low, K. L., Zhang, J. & Liu, W., Sept 2024, In: Nanomaterials. 14, 18, 1529.Research output: Contribution to journal › Article › peer-review
Open Access5 Citations (Scopus) -
Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates
Wang, X. R., Zeng, Y. X., Zhang, J., Huang, W., Ma, H. P. & Zhang, Q. C., 1 Jan 2024, In: Materials Research Express. 11, 1, 015902.Research output: Contribution to journal › Article › peer-review
Open Access10 Citations (Scopus)