Workshop Series on TCAD Device and Process Simulation: Theory, Hands-On Practice, and Applications

Description

This workshop series provides a structured, hands-on introduction to Technology Computer-Aided Design (TCAD) tools for semiconductor device and process simulation. Across 40 contact hours, participants will gain practical skills in using leading TCAD platforms (Sentaurus, Global TCAD Solutions, and Vienna PS) to model, simulate, and analyze semiconductor devices such as diodes, MOS capacitors, and MOSFETs.

The program combines theory and guided practice, covering topics from PN junction IV characteristics to MOS capacitor C–V curves, MOSFET threshold voltage modeling, and short-channel effects. Dedicated sessions on GTS and Vienna PS extend the scope to process-level simulations, including etching and deposition.

Students will complete independent simulation tasks and written reports after each session, culminating in a final presentation of results. Through this applied learning approach, the series develops both technical proficiency in TCAD workflows and the ability to apply simulation to solve real-world semiconductor engineering problems.

Period	10 Jul 2025 → 25 Jul 2025
Held at	Institute of Microelectronics, Chinese Academy of Sciences