Colloquium on Industry–Academia–Research Collaborative Innovation in GaN Technology

Description

the “Colloquium on Industry–Academia–Research Collaborative Innovation in GaN Technology” was held at Xi’an Jiaotong–Liverpool University, jointly organized by the IEEE CASS-EDS Suzhou Joint Chapter, IEEE CASS-EDS XJTLU Student Branch, and the XJTLU Advanced Semiconductor Research Center. The event featured keynote talks from Dr. Dunjun Chen (Nanjing University) on GaN gate dielectric breakthroughs, Dr. Jiangmin Gu (XJTLU) on monolithic GaN-based PMIC design, and Dr. Shuilin Tian (Innoscience) on high-frequency, high-efficiency GaN power electronics. XJTLU postgraduate students also showcased research in GaN material engineering, device optimization, and simulation. The colloquium provided a platform to strengthen academia–industry collaboration, foster talent development, and advance wide-bandgap semiconductor innovation.

Period	11 Jul 2025
Event type	Seminar
Location	Suzhou, ChinaShow on map